Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing semiconductor structure
-
Application No.: US17446015Application Date: 2021-08-26
-
Publication No.: US12166032B2Publication Date: 2024-12-10
- Inventor: Ching-Lun Ma
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202011219025.2 20201104
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H10B12/00

Abstract:
A semiconductor structure includes a substrate, a gate dielectric layer and a conductive layer that are stacked, and the gate dielectric layer is located between the substrate and the conductive layer. The substrate includes a semiconductor substrate and an insulating substrate which are arranged on the same layer. The conductive layer includes: a gate conductor layer, a projection of which on the substrate covers the semiconductor substrate, and an external connecting layer, a projection of which on the substrate covers the insulating substrate. A groove is formed on a bottom surface, towards the substrate, of the external connecting layer and the groove is filled with an insulator.
Public/Granted literature
- US20220139902A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2022-05-05
Information query
IPC分类: