Invention Grant
- Patent Title: Optoelectronic device having an array of germanium-based diodes with low dark current
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Application No.: US17540323Application Date: 2021-12-02
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Publication No.: US12166063B2Publication Date: 2024-12-10
- Inventor: Jean-Louis Ouvrier-Buffet , Abdelkader Aliane , Jean-Michel Hartmann , Julie Widiez
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/02
Abstract:
An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.
Public/Granted literature
- US20220093674A1 OPTOELECTRONIC DEVICE HAVING AN ARRAY OF GERMANIUM-BASED DIODES WITH LOW DARK CURRENT Public/Granted day:2022-03-24
Information query
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