Invention Grant
- Patent Title: Thin film laminate structure, integrated device including the same, and method of manufacturing the thin film laminate structure
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Application No.: US17370361Application Date: 2021-07-08
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Publication No.: US12166066B2Publication Date: 2024-12-10
- Inventor: Kiyoung Lee , Kookrin Char , Byunghoon Na , Hahoon Lee , Dowon Song
- Applicant: Samsung Electronics Co., Ltd. , SEOUL NATIONAL UNIVERSITY R & DB FOUNDATION
- Applicant Address: KR Suwon-si; KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,SEOUL NATIONAL UNIVERSITY R & DB FOUNDATION
- Current Assignee: Samsung Electronics Co., Ltd.,SEOUL NATIONAL UNIVERSITY R & DB FOUNDATION
- Current Assignee Address: KR Suwon-si; KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2021-0011036 20210126
- Main IPC: H01G4/12
- IPC: H01G4/12 ; H01G4/30 ; H01L49/02
Abstract:
A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers: AB1-xB′xO3 wherein, in Formula 1, A, B, B′, and x are the same as defined in the specification.
Public/Granted literature
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