A silicon carbide semiconductor device being capable of operating at least 100 degree C., includes a semiconductor substrate having an active region, the semiconductor substrate having first and second surfaces opposite to each other, a first semiconductor region of an n type, provided in the semiconductor substrate, a second semiconductor region of a p type, provided in the active region, between the first surface of the semiconductor substrate and the first semiconductor region, and a device element structure including a pn junction between the second and first semiconductor regions that forms a body diode through which a current flows when the semiconductor device is turned on. A stacking fault area that is a sum of areas that contain stacking faults within an entire active region of the first surface of the semiconductor substrate in the first surface is set to be greater, the higher a breakdown voltage is set.