Invention Grant
- Patent Title: Array structure of capacitors, method for manufacturing array structure of capacitors, and dynamic random access memory
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Application No.: US17575872Application Date: 2022-01-14
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Publication No.: US12167585B2Publication Date: 2024-12-10
- Inventor: Sen Li , Qiang Wan , Tao Liu , Penghui Xu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202010976168.1 20200916
- Main IPC: H10B12/00
- IPC: H10B12/00
Abstract:
An array structure of capacitors are provided. The array structure of capacitors includes a substrate and a first connection pad, a second connection pad, a first capacitive structure and a second capacitive structure that are disposed on the substrate. The first capacitive structure is disposed outside the second capacitive structure and adjacent to an edge of the substrate. The bottom surface of the first capacitive structure towards the substrate and the top surface of the first connection pad are disposed at intervals.
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