Invention Grant
- Patent Title: Semiconductor Mach-Zehnder optical modulator and IQ modulator
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Application No.: US17641022Application Date: 2019-09-12
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Publication No.: US12169347B2Publication Date: 2024-12-17
- Inventor: Josuke Ozaki , Yoshihiro Ogiso , Yasuaki Hashizume
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- International Application: PCT/JP2019/035886 WO 20190912
- International Announcement: WO2021/048972 WO 20210318
- Main IPC: G02F1/225
- IPC: G02F1/225 ; G02F1/21 ; H04B10/516

Abstract:
A semiconductor Mach-Zehnder optical modulator includes input-side lead-out lines, phase modulation electrode lines, and electrodes that apply modulation signals propagating through the phase modulation electrode lines to waveguides, respectively. The semiconductor Mach-Zehnder optical modulator further includes a conductive layer between a substrate and the waveguides, a plurality of first wiring layers connected to the conductive layer, and a second wiring layer that connects an electrode pad and the plurality of first wiring layers.
Public/Granted literature
- US20220326587A1 Semiconductor Mach-Zehnder Optical Modulator and IQ Modulator Public/Granted day:2022-10-13
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