Invention Grant
- Patent Title: Method of fabricating and servicing a photomask
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Application No.: US18210551Application Date: 2023-06-15
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Publication No.: US12169357B2Publication Date: 2024-12-17
- Inventor: Chun-Fu Yang , Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: G03F1/82
- IPC: G03F1/82 ; G03F7/20
Abstract:
A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.
Public/Granted literature
- US20230341767A1 METHOD OF FABRICATING AND SERVICING A PHOTOMASK Public/Granted day:2023-10-26
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