Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US18300175Application Date: 2023-04-13
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Publication No.: US12170267B2Publication Date: 2024-12-17
- Inventor: Jiun Yi Wu , Chen-Hua Yu , Chung-Shi Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/00 ; H01L23/52 ; H01L23/538 ; H01L25/065

Abstract:
A structure includes core substrates attached to a first side of a redistribution structure, wherein the redistribution structure includes first conductive features and first dielectric layers, wherein each core substrate includes conductive pillars, wherein the conductive pillars of the core substrates physically and electrically contact first conductive features; an encapsulant extending over the first side of the redistribution structure, wherein the encapsulant extends along sidewalls of each core substrate; and an integrated device package connected to a second side of the redistribution structure.
Public/Granted literature
- US20230253368A1 Semiconductor Device and Method of Manufacture Public/Granted day:2023-08-10
Information query
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