In an embodiment an optoelectronic semiconductor component includes a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of AlxGa1-xN composition, with 0.3≤x≤0.95, a second semiconductor layer of a p-conductivity type, an active zone between the first semiconductor layer and the second semiconductor layer, the active zone including a quantum well structure and an intermediate layer between the first semiconductor layer and the active zone, wherein the intermediate layer includes a semiconductor material of AlyGa1-yN composition, with x*1.05≤y≤1, and wherein the intermediate layer is located directly adjacent to the active zone.