Invention Grant
- Patent Title: Interface protocols between memory controller and NAND flash memory for cache programming
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Application No.: US18091020Application Date: 2022-12-29
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Publication No.: US12176047B2Publication Date: 2024-12-24
- Inventor: Xiaojiang Guo
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C7/10 ; G11C16/10

Abstract:
A method for controlling cache programming of a NAND flash memory is disclosed. A programming failure signal is received by a memory controller from the NAND flash memory indicative of failure of the cache programming. After receiving the programming failure signal, a first page buffer release command is sent by the memory controller to the NAND flash memory to release new programming data cached by the NAND flash memory. The cached new programming data is received by the memory controller from the NAND flash memory. After receiving the cached new programming data, a second page buffer release command is sent by the memory controller to the NAND flash memory to release current programming data used for the cache programming. The current programming data is received by the memory controller from the NAND flash memory. The current programming data is reconstructed by the NAND flash memory after releasing the cached new programming data.
Public/Granted literature
- US20240161840A1 INTERFACE PROTOCOLS BETWEEN MEMORY CONTROLLER AND NAND FLASH MEMORY FOR CACHE PROGRAMMING Public/Granted day:2024-05-16
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