Invention Grant
- Patent Title: Internal and external data transfer for stacked memory dies
-
Application No.: US18407062Application Date: 2024-01-08
-
Publication No.: US12176059B2Publication Date: 2024-12-24
- Inventor: Kang-Yong Kim , Hyunyoo Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
Some memory dies in a stack can be connected externally to the stack and other memory dies in the stack can be connected internally to the stack. The memory dies that are connected externally can act as interface dies for other memory dies that are connected internally thereto. The external connections can be used for transmitting signals indicative of data to and/or from the memory dies while the memory dies in the stack can be connected by a cascading connection for transmission of other signals such as command, address, power, ground, etc.
Public/Granted literature
- US20240161794A1 INTERNAL AND EXTERNAL DATA TRANSFER FOR STACKED MEMORY DIES Public/Granted day:2024-05-16
Information query