Invention Grant
- Patent Title: Dielectric structure overlying image sensor element to increase quantum efficiency
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Application No.: US17197291Application Date: 2021-03-10
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Publication No.: US12176372B2Publication Date: 2024-12-24
- Inventor: Cheng-Hsien Chou , Sheng-Chau Chen , Ming-Che Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Various embodiments of the present disclosure are directed towards a pixel sensor. The pixel sensor includes a substrate having a front-side opposite a back-side. An image sensor element comprises an active layer disposed within the substrate, where the active layer comprises germanium. An anti-reflective coating (ARC) structure overlies the back-side of the substrate. The ARC structure includes a first dielectric layer overlying the back-side of the substrate, a second dielectric layer overlying the first dielectric layer, and a third dielectric layer overlying the second dielectric layer. A first index of refraction of the first dielectric layer is less than a second index of refraction of the second dielectric layer, and a third index of refraction of the third dielectric layer is less than the first index of refraction.
Public/Granted literature
- US20220293647A1 DIELECTRIC STRUCTURE OVERLYING IMAGE SENSOR ELEMENT TO INCREASE QUANTUM EFFICIENCY Public/Granted day:2022-09-15
Information query
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