Invention Grant
- Patent Title: Blister-free polycrystalline silicon for solar cells
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Application No.: US17409614Application Date: 2021-08-23
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Publication No.: US12176449B2Publication Date: 2024-12-24
- Inventor: Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Périne Jaffrennou , Nada Habka , Sergej Filonovich
- Applicant: Maxeon Solar Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L31/068
- IPC: H01L31/068 ; H01L31/02 ; H01L31/0216 ; H01L31/0224 ; H01L31/0236 ; H01L31/0368 ; H01L31/18

Abstract:
Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
Public/Granted literature
- US20220020889A1 BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS Public/Granted day:2022-01-20
Information query
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