Invention Grant
- Patent Title: Power storage device
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Application No.: US16991320Application Date: 2020-08-12
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Publication No.: US12183477B2Publication Date: 2024-12-31
- Inventor: Junpei Momo , Hiroatsu Todoriki , Kuniharu Nomoto
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: NIXON PEABODY LLP
- Agent Jeffrey L. Costellia
- Priority: JP2011-185212 20110826
- Main IPC: C01B32/23
- IPC: C01B32/23 ; H01B1/04 ; H01G11/06 ; H01G11/32 ; H01G11/38 ; H01G11/86 ; H01M4/04 ; H01M4/133 ; H01M4/1393 ; H01M4/587 ; H01M10/052 ; H01M10/0525 ; H01M10/058 ; H01M4/02

Abstract:
A power storage device with high output is provided, in which the specific surface area is increased while keeping the easy-to-handle particle size of its active material. The power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte. The negative electrode active material layer includes a negative electrode active material which is a particle in which a plurality of slices of graphite is overlapped with each other with a gap therebetween. It is preferable that the grain diameter of the particle be 1 μm to 50 μm. Further, it is preferable that the electrolyte be in contact with the gap between the slices of graphite.
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