Invention Grant
- Patent Title: Tuning voltage setpoint in a pulsed RF signal for a tunable edge sheath system
-
Application No.: US17908793Application Date: 2021-02-24
-
Publication No.: US12183544B2Publication Date: 2024-12-31
- Inventor: David Hopkins , Bradford Lyndaker , Alexei Marakhtanov , Felix Kozakevich
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: PENILLA IP, APC
- International Application: PCT/US2021/019497 WO 20210224
- International Announcement: WO2021/178185 WO 20210910
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Method for tuning a voltage setpoint for a multi-state pulsed RF signal in a plasma processing system, including: applying RF power from a first generator to an ESC, the RF power from the first generator defining a first multi-state pulsed RF signal; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator defining a second multi-state pulsed RF signal having a first state and a second state, wherein for each state of the second multi-state pulsed RF signal, the second generator automatically introduces a phase adjustment to substantially match phase with a corresponding state of the first multi-state pulsed RF signal; adjusting a voltage setpoint for the second state of the second multi-state pulsed RF signal to tune the phase adjustment to a target phase adjustment setting.
Public/Granted literature
- US20230092887A1 TUNING VOLTAGE SETPOINT IN A PULSED RF SIGNAL FOR A TUNABLE EDGE SHEATH SYSTEM Public/Granted day:2023-03-23
Information query