Invention Grant
- Patent Title: Method of fabricating gallium nitride substrate using ion implantation
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Application No.: US17418486Application Date: 2019-09-30
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Publication No.: US12183575B2Publication Date: 2024-12-31
- Inventor: Jea Gun Park , Tae Hun Shim , Jae Hyoung Shim , Jin Seong Park , Jae Un Lee
- Applicant: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Applicant Address: KR Seoul
- Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0169008 20181226
- International Application: PCT/KR2019/012733 WO 20190930
- International Announcement: WO2020/138659 WO 20200702
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324
Abstract:
The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.
Public/Granted literature
- US20220115228A1 METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE USING ION IMPLANTATION Public/Granted day:2022-04-14
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