Invention Grant
- Patent Title: Integrated circuit structure
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Application No.: US17884272Application Date: 2022-08-09
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Publication No.: US12183652B2Publication Date: 2024-12-31
- Inventor: Jhon-Jhy Liaw
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/367 ; H01L27/092 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/8238 ; H01L27/12

Abstract:
An IC structure includes a plurality of first fins, a plurality of second fins, a plurality of first gate structures, a plurality of second gate structures, and a first gate contact. The first fins and the second fins are over a substrate. The first gate structures traverse the plurality of first fins. The second gate structures traverse the plurality of second fins. The first gate structures have a first gate pitch. The second gate structures have a second gate pitch wider than the first gate pitch. The first gate contact is over a first one of the second gate structures. The first gate contact overlaps a location where the first one of the second gate structures traverses across a first one of the second fins.
Public/Granted literature
- US20220384303A1 INTEGRATED CIRCUIT STRUCTURE Public/Granted day:2022-12-01
Information query
IPC分类: