Invention Grant
- Patent Title: Image sensor and method of making
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Application No.: US17483962Application Date: 2021-09-24
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Publication No.: US12183753B2Publication Date: 2024-12-31
- Inventor: Wei-Lin Chen , Ching-Chung Su , Chun-Hao Chou , Kuo-Cheng Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G02F1/19

Abstract:
An image sensor includes a first photodiode and a second photodiode. The image sensor further includes a first color filter over the first photodiode; and a second color filter over the second photodiode. The image sensor further includes a first microlens over the first color filter and a second microlens over the second color filter. The image sensor further includes a first electro-optical (EO) film between the first color filter and the first microlens, wherein a material of the first EO film is configured to change refractive index in response to application of an electrical field. The image sensor further includes a second EO film between the second color filter and the second microlens, wherein a material of the second EO film is configured to change refractive index in response to application of an electrical field.
Public/Granted literature
- US20230012344A1 IMAGE SENSOR AND METHOD OF MAKING Public/Granted day:2023-01-12
Information query
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