A method for manufacturing the semiconductor structure includes: a substrate is provided; isolation structures having a first depth are formed in the substrate; word line structures having a second depth are formed in the substrate, where part of the word line structures are formed in respective ones of the isolation structures, and the second depth is less than the first depth; the isolation structures are etched in a direction perpendicular to the substrate to form a first trench having a third depth in each isolation structure; and a first insulating layer covering the word line structures and the first trenches is formed on the substrate to form an air gap structure in each isolation structure.