Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US18351096Application Date: 2023-07-12
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Publication No.: US12185533B2Publication Date: 2024-12-31
- Inventor: Hideto Takekida
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2019-171693 20190920
- Main IPC: H01L25/065
- IPC: H01L25/065 ; G11C16/08 ; H10B41/35 ; H10B41/20

Abstract:
According to one embodiment, a semiconductor memory device includes a first cell region including a plurality of memory cells, a second cell region including a plurality of memory cells, a connection region between the first cell region and the second cell region, and a row decoder for propagating a voltage to word lines in the first and second cell regions via the connection region.
Public/Granted literature
- US20230363156A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2023-11-09
Information query
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