Embodiments of ferroelectric memory devices and methods for forming the ferroelectric memory devices are disclosed. In an example, a method of forming a ferroelectric memory cell is disclosed. A first electrode is formed. A doped ferroelectric layer is formed in contact with the first electrode. The doped ferroelectric layer includes oxygen and one or more ferroelectric metals. The doped ferroelectric layer further includes a plurality of dopants including at least one dopant from one of Group II elements, Group III elements, or Lanthanide elements. The plurality of dopants are different from the one or more ferroelectric metals. A second electrode is formed in contact with the doped ferroelectric layer.