Invention Grant
- Patent Title: Quantum circuit with trench capacitor
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Application No.: US17563441Application Date: 2021-12-28
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Publication No.: US12185644B2Publication Date: 2024-12-31
- Inventor: Li-Wen Hung , Elbert Emin Huang , Harry Jonathon Mamin , Daniel Rugar , Martin O. Sandberg , Joseph Finley
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L49/02 ; H10N60/01 ; H10N60/12 ; H10N69/00

Abstract:
One or more systems, devices, methods of use and/or methods of fabrication provided herein relate to a superconducting device that can be operated with minimal electric field energy coupling at surface layers of the superconducting device and/or that can have a small footprint. According to one embodiment, a device can comprise a Josephson junction located between a first capacitor portion and a second capacitor portion of a capacitor, wherein at least a trenched section of the first capacitor portion is located beneath a surface of a substrate, and wherein at least a trenched section of the second capacitor portion is located beneath the surface of the substrate. According to another embodiment, a device can comprise a capacitor disposed within a substrate layer and the capacitor comprising a pair of material-filled trenches in the substrate layer, and a Josephson junction coupled to the capacitor.
Public/Granted literature
- US20230210024A1 QUANTUM CIRCUIT WITH TRENCH CAPACITOR Public/Granted day:2023-06-29
Information query
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