Memristor devices are provided. In an embodiment, a memristor device comprises a top electrode; a bottom electrode; a dielectric material between the top and bottom electrodes; and an ion-implanted conductive region embedded within the dielectric material, the ion-implanted conductive region comprising the dielectric material. The ion-implanted conductive region forms an interface with the dielectric material such that a voltage applied across the top and bottom electrodes causes electrons to cross the interface as they move between the top and bottom electrodes so that the memristor device exhibits memristance.