- Patent Title: Memory array, memory cell, and data read and write method thereof
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Application No.: US18053898Application Date: 2022-11-09
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Publication No.: US12190929B2Publication Date: 2025-01-07
- Inventor: Yulei Wu , Xiaoguang Wang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN202111564800.2 20211220
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/16

Abstract:
The present disclosure provides a memory array, a memory cell, and a data read and write method thereof. Two storage nodes are provided in each memory cell of a memory array of a magnetic random access memory (MRAM), such that when one storage node in the memory cell fails, the other storage node in the memory cell can be used to write and read data.
Public/Granted literature
- US20230197133A1 MEMORY ARRAY, MEMORY CELL, AND DATA READ AND WRITE METHOD THEREOF Public/Granted day:2023-06-22
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