Invention Grant
- Patent Title: Refresh address generation circuit
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Application No.: US18153312Application Date: 2023-01-11
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Publication No.: US12190933B2Publication Date: 2025-01-07
- Inventor: Yinchuan Gu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202210601980.5 20220530
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408

Abstract:
A refresh address generation circuit includes: a refresh control circuit and an address generator. The refresh control circuit receives multiple first refresh commands in sequence and performs multiple first refresh operations accordingly, outputs a first clock signal when the number of first refresh operations is less than m, and outputs a second clock signal when the number of first refresh operation is equal to m. The address generator is coupled to the refresh control circuit, and configured to prestore a first address and receive the first clock signal or the second clock signal, and during each first refresh operation, output an address to be refreshed in response to the first clock signal and change the first address in response to the second clock signal. The address to be refreshed includes a first address and a second address with the lowest bit opposite to that of the first address.
Public/Granted literature
- US20230386547A1 REFRESH ADDRESS GENERATION CIRCUIT Public/Granted day:2023-11-30
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