Invention Grant
- Patent Title: Memory device and program method of ground select transistors
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Application No.: US17817408Application Date: 2022-08-04
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Publication No.: US12190954B2Publication Date: 2025-01-07
- Inventor: Hanjun Lee , Byungsoo Kim , Sangwan Nam
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2021-0127543 20210927
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C16/34

Abstract:
A program method includes applying a first voltage to a plurality of bit lines, applying a second voltage to a common source line (CSL), and performing a program loop by applying a program voltage and a verify voltage to each of a plurality of ground selection lines (GSLs) positioned between one bit line among the plurality of bit lines and the CSL. The program loop is performed on both a program completed cell in which a program is completed by applying the program voltage and a program target cell.
Public/Granted literature
- US20230096057A1 MEMORY DEVICE AND PROGRAM METHOD THEREOF Public/Granted day:2023-03-30
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