Ions are implanted into a first wafer through a top side, generating an ion damaged layer underneath the substrate film of the first wafer. A stress inducing layer is applied on a surface on the top side of the first wafer on one of the ion implanted side and the opposite side. The substrate film is separated from the first wafer at the ion damaged layer. the separated substrate film is bonded to a second wafer at a surface on one of a first side and a second side that this opposite of the first side of the second wafer to form an engineered wafer.