Invention Grant
- Patent Title: Semiconductor structure and manufacturing method of semiconductor structure
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Application No.: US17648130Application Date: 2022-01-16
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Publication No.: US12191263B2Publication Date: 2025-01-07
- Inventor: Mengmeng Wang , Hsin-Pin Huang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202110224400.0 20210301
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/544 ; H01L23/58
Abstract:
A semiconductor structure includes a chip structure and a sealing structure disposed on a substrate of the semiconductor structure. The sealing structure includes a metal wall body and a blocking wall body located on a top of the metal wall body, and the metal wall body and the blocking wall body both are disposed around the chip structure.
Public/Granted literature
- US20220278054A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Public/Granted day:2022-09-01
Information query
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