Invention Grant
- Patent Title: Switching element and memory device
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Application No.: US17943763Application Date: 2022-09-13
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Publication No.: US12193340B2Publication Date: 2025-01-07
- Inventor: Taichi Igarashi , Yuichi Ito , Eiji Kitagawa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2022-044327 20220318
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C11/16 ; G11C13/00 ; H10B61/00 ; H10B63/00 ; H10N50/10 ; H10N50/80 ; H10N70/00

Abstract:
A switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).
Public/Granted literature
- US20230301205A1 SWITCHING ELEMENT AND MEMORY DEVICE Public/Granted day:2023-09-21
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