Invention Grant
- Patent Title: Timing control circuit of memory device with tracking word line and tracking bit line
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Application No.: US18344459Application Date: 2023-06-29
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Publication No.: US12198754B2Publication Date: 2025-01-14
- Inventor: Xiu-Li Yang , Lu-Ping Kong , Kuan Cheng , He-Zhou Wan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC Nanjing Company Limited , TSMC China Company Limited
- Applicant Address: TW Hsinchu; CN Nanjing; CN Shanghai
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC Nanjing Company Limited,TSMC China Company Limited
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC Nanjing Company Limited,TSMC China Company Limited
- Current Assignee Address: TW Hsinchu; CN Nanjing; CN Shanghai
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: CN202011476130.4 20201215
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C11/418 ; H03K3/037

Abstract:
A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.
Public/Granted literature
- US20230352085A1 TIMING CONTROL CIRCUIT OF MEMORY DEVICE WITH TRACKING WORD LINE AND TRACKING BIT LINE Public/Granted day:2023-11-02
Information query
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