- Patent Title: Apparatus, memory device, and method for multi-phase clock training
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Application No.: US17959663Application Date: 2022-10-04
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Publication No.: US12198783B2Publication Date: 2025-01-14
- Inventor: Taegook Kim , Woojin Na , Taegeun Yoo , Hyeseung Yu , Jaejun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2021-0153447 20211109,KR10-2022-0034173 20220318
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10

Abstract:
Provided are an apparatus, a memory device, and a method for multi-phase clock training. The memory device includes a clock training circuit configured to receive a clock through a first signal pin, among a plurality of signal pins and connected to a first signal line connected to the first signal pin. The clock training circuit generates a multi-phase clock upon receiving the clock, and generates a three-dimensional (3-D) duty offset code (DOC) for the multi-phase clock by simultaneously phase-sweeping between three internal clock signals in a duty adjustment step in the multi-phase clock. The memory device corrects a duty error of the multi-phase clock using the 3-D DOC.
Public/Granted literature
- US20230147016A1 APPARATUS, MEMORY DEVICE, AND METHOD FOR MULTI-PHASE CLOCK TRAINING Public/Granted day:2023-05-11
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