Invention Grant
- Patent Title: Nonmagnetic material-dispersed Fe-Pt based sputtering target
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Application No.: US18145400Application Date: 2022-12-22
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Publication No.: US12198911B2Publication Date: 2025-01-14
- Inventor: Atsushi Sato , Hideo Takami , Yuichiro Nakamura
- Applicant: JX Advanced Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Advanced Metals Corporation
- Current Assignee: JX Advanced Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: MARSHALL, GERSTEIN & BORUN LLP
- Priority: JP2016-172291 20160902
- Main IPC: H01J37/34
- IPC: H01J37/34 ; B22F1/05 ; B22F1/12 ; B22F3/14 ; B22F3/15 ; C22C5/04 ; C22C33/02 ; C22C38/00 ; C23C14/34 ; G11B5/851 ; H01F41/18

Abstract:
Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-αPtα)1-βGeβ, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (SGe30mass %/SGe) of 0.5 or less. The ratio (SGe30mass %/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass %) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.
Public/Granted literature
- US20230125486A1 NONMAGNETIC MATERIAL-DISPERSED FE-PT BASED SPUTTERING TARGET Public/Granted day:2023-04-27
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