A process chamber includes a chamber body, a base, and a magnetic conductive device. The base is arranged in the chamber body. The base includes a carrier surface configured to carry a wafer. The magnetic conductive device includes a magnet structure and a magnetic conductive structure made of a soft magnetic material. The magnet structure is arranged around the base and configured to provide a magnetic field above the base. The magnetic conductive structure is arranged under the carrier surface of the base, has a preset distance from the carrier surface of the base, and is configured to guide the distribution of the magnetic field lines of the magnetic field above the base to cause the intensity of the magnetic field to be evenly distributed above the base and the directions of the magnetic field lines to be consistent at different positions of the corresponding carrier surface.