Invention Grant
- Patent Title: Epitaxial structure and transistor including the same
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Application No.: US18591803Application Date: 2024-02-29
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Publication No.: US12199145B2Publication Date: 2025-01-14
- Inventor: Chih-Hung Yen , Wenbi Cai , Houng-Chi Wei
- Applicant: XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Current Assignee: XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Thomas | Horstemeyer, LLP
- Priority: CN201910937902.0 20190930
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/02 ; H01L29/08 ; H01L29/20 ; H01L29/205 ; H01L29/66 ; H01L29/737
Abstract:
An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0
Public/Granted literature
- US20240204053A1 Epitaxial Structure And Transistor Including The Same Public/Granted day:2024-06-20
Information query
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