Invention Grant
- Patent Title: Semiconductor device including superlattice with O18 enriched monolayers
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Application No.: US18213346Application Date: 2023-06-23
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Publication No.: US12199148B2Publication Date: 2025-01-14
- Inventor: Marek Hytha , Nyles Wynn Cody , Keith Doran Weeks
- Applicant: ATOMERA INCORPORATED
- Applicant Address: US CA Los Gatos
- Assignee: ATOMERA INCORPORATED
- Current Assignee: ATOMERA INCORPORATED
- Current Assignee Address: US CA Los Gatos
- Agency: ALLEN, DYER, DOPPELT, GILCHRIST, P.A.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/10
Abstract:
A semiconductor device may include a semiconductor layer, and a superlattice adjacent the semiconductor layer and including stacked groups of layers. Each group of layers may include stacked base semiconductor monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one oxygen monolayer of a given group of layers may include an atomic percentage of 18O greater than 10 percent.
Public/Granted literature
- US20230361178A1 SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH O18 ENRICHED MONOLAYERS Public/Granted day:2023-11-09
Information query
IPC分类:
