Invention Grant
- Patent Title: Optical semiconductor element
-
Application No.: US17965090Application Date: 2022-10-13
-
Publication No.: US12199210B2Publication Date: 2025-01-14
- Inventor: Takahide Yanai , Daisuke Iida
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP2021-170201 20211018
- Main IPC: H01L31/167
- IPC: H01L31/167 ; H01L31/107 ; H01L31/105

Abstract:
An optical semiconductor element includes a substrate and a plurality of cells. Each cell includes an optical layer, a first semiconductor layer, and a second semiconductor layer. The plurality of cells include a first cell and a second cell. The second semiconductor layer of the first cell and the first semiconductor layer of the second cell are electrically connected to each other by a first connection portion of a first wiring portion. The first wiring portion has a first extending portion that extends from the first connection portion so as to surround four side portions of the optical layer of the first cell. The optical layer is an active layer that generates light having a central wavelength of 3 μm or more and 10 μm or less or an absorption layer having a maximum sensitivity wavelength of 3 μm or more and 10 μm or less.
Public/Granted literature
- US20230118125A1 OPTICAL SEMICONDUCTOR ELEMENT Public/Granted day:2023-04-20
Information query
IPC分类: