Invention Grant
- Patent Title: Copper metallization for through-glass vias on thin glass
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Application No.: US17277748Application Date: 2019-09-20
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Publication No.: US12200875B2Publication Date: 2025-01-14
- Inventor: Yiu-Hsiang Chang , Jen-Chieh Lin , Prantik Mazumder , Scott Christopher Pollard , Pei-Lien Tseng
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agent Svetlana Z. Short
- International Application: PCT/US2019/052126 WO 20190920
- International Announcement: WO2020/061437 WO 20200326
- Main IPC: H05K3/42
- IPC: H05K3/42 ; C23C18/16 ; C25D7/00 ; H05K1/03

Abstract:
A method for metallizing through-glass vias in a glass substrate includes functionalizing a surface of the glass substrate with a silane. The glass substrate has an average thickness t and comprises a plurality of vias extending through the thickness t. The method further includes applying an electroless plating solution comprising a copper ion to deposit a copper seed layer on the functionalized surface, disposing an electrolyte within the plurality of vias, wherein the electrolyte comprises copper ions to be deposited on the copper seed layer within the plurality of vias; positioning an electrode within the electrolyte; and applying a current between the electrode and the glass substrate, thereby reducing the copper ions into copper within the plurality of vias such that each of the plurality of vias is filled with copper and the copper has a void volume fraction of less than 5%.
Public/Granted literature
- US20210360797A1 COPPER METALLIZATION FOR THROUGH-GLASS VIAS ON THIN GLASS Public/Granted day:2021-11-18
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