Invention Grant
- Patent Title: Structure and method for MRAM devices having spacer element
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Application No.: US18321524Application Date: 2023-05-22
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Publication No.: US12201031B2Publication Date: 2025-01-14
- Inventor: Hsiang-Ku Shen , Dian-Hau Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H10N50/10
- IPC: H10N50/10 ; G11C11/16 ; H01F10/32 ; H10B61/00 ; H10N50/01 ; H10N50/80 ; H10N50/85
Abstract:
Methods and devices are provided that include a magnetic tunneling junction (MTJ) element. A first spacer layer abuts sidewalls of the MTJ element. The first spacer layer has a low-dielectric constant (low-k) oxide composition. A second spacer layer is disposed on the first spacer layer and has a low-k nitride composition.
Public/Granted literature
- US20230301197A1 STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT Public/Granted day:2023-09-21
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