Invention Grant
- Patent Title: Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
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Application No.: US17399437Application Date: 2021-08-11
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Publication No.: US12201040B2Publication Date: 2025-01-14
- Inventor: Won Tae Koo , Jae Hyun Han
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2021-0023707 20210222
- Main IPC: H10N70/20
- IPC: H10N70/20

Abstract:
An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a gate electrode layer disposed on the hydrogen source layer.
Public/Granted literature
- US20220271221A1 ELECTRONIC DEVICE INCLUDING RESISTANCE CHANGE CHANNEL LAYER Public/Granted day:2022-08-25
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