• Patent Title: Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
  • Application No.: US17399437
    Application Date: 2021-08-11
  • Publication No.: US12201040B2
    Publication Date: 2025-01-14
  • Inventor: Won Tae KooJae Hyun Han
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon-si
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Icheon-si
  • Priority: KR10-2021-0023707 20210222
  • Main IPC: H10N70/20
  • IPC: H10N70/20
Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogen
Abstract:
An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a gate electrode layer disposed on the hydrogen source layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0