Invention Grant
- Patent Title: Sense amplifier, method for driving sense amplifier, and memory
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Application No.: US18166476Application Date: 2023-02-08
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Publication No.: US12205628B2Publication Date: 2025-01-21
- Inventor: Sungsoo Chi
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202210027454.2 20220111
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/4091

Abstract:
A sense amplifier includes an amplifying circuit and a voltage equalizing circuit. The amplifying circuit includes: a first P-type transistor, having a first terminal connected to a third node, a second terminal connected to a first node, and a gate connected to a first bit line; a second P-type transistor, having a first terminal connected to the third node, a second terminal connected to a second node, and a gate connected to a second bit line; a first N-type transistor, having a first terminal connected to the first node, a second terminal connected to a fourth node, and a gate connected to the first bit line; a second N-type transistor, having a first terminal connected to the second node, a second terminal connected to the fourth node, a gate connected to the second bit line. The voltage equalizing circuit is connected between the first node and the second node.
Public/Granted literature
- US20230223072A1 SENSE AMPLIFIER, METHOD FOR DRIVING SENSE AMPLIFIER, AND MEMORY Public/Granted day:2023-07-13
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