Invention Grant
- Patent Title: Memory system and operating method of memory system
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Application No.: US17821187Application Date: 2022-08-21
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Publication No.: US12205670B2Publication Date: 2025-01-21
- Inventor: Win-San Khwa , Ping-Chun Wu , Tung Ying Lee , Meng-Fan Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F7/48 ; G06N3/063 ; G11C7/12 ; G11C8/08

Abstract:
Memory systems and operating method of a memory system are provided. The memory system utilized for performing a computing-in-memory (CiM) operation comprises a memory array and a processing circuit. The memory array comprises a plurality of memory cells. The processing circuit is coupled to the memory array and comprises a programming circuit and a control circuit. The programming circuit is coupled to the memory array and configured to perform a write operation for programming electrical characteristics of the memory cells. The control circuit is coupled to the programming circuit and configured to: receive a plurality of weight data corresponding to a plurality of weight values; and control the write operation performed by the programming circuit, so the electrical characteristics of the memory cells are programmed following a sequential order of the weight values.
Public/Granted literature
- US20230317124A1 MEMORY SYSTEM AND OPERATING METHOD OF MEMORY SYSTEM Public/Granted day:2023-10-05
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