Invention Grant
- Patent Title: Inductor device
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Application No.: US17662433Application Date: 2022-05-09
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Publication No.: US12205751B2Publication Date: 2025-01-21
- Inventor: Hsiao-Tsung Yen
- Applicant: Realtek Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Realtek Semiconductor Corporation
- Current Assignee: Realtek Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Priority: TW110118540 20210521
- Main IPC: H01H9/28
- IPC: H01H9/28 ; H01F27/28 ; H01F27/29 ; H01F27/40

Abstract:
An inductor device includes a first trace, a second trace, and a capacitor. The first trace includes a first sub-trace and a second sub-trace. The first sub-trace and the second sub-trace form a plurality of first wires together at a first side of the inductor device, and form a plurality of second wires together at a second side of the inductor device. The second sub-trace is coupled to one terminal of the first sub-trace at a first node. The third sub-trace and the fourth sub-trace form a plurality of third wires together at the first side of the inductor device, and form a plurality of fourth wires together at the second side of the inductor device. The fourth sub-trace is coupled to one terminal of the third sub-trace at a second node. The capacitor is coupled to the first node and the second node.
Public/Granted literature
- US20220375676A1 INDUCTOR DEVICE Public/Granted day:2022-11-24
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