Embodiments of the present disclosure provide a temperature change rate control device, applied to a process chamber of a semiconductor process apparatus, including a temperature monitor unit, a controller, a gas inflation mechanism, and a gas extraction mechanism. The temperature monitor unit is configured to obtain a temperature of a wafer in the process chamber in real time. The controller is configured to calculate a temperature change rate of the wafer according to the temperature obtained by the temperature monitor unit. The gas inflation mechanism communicates with the process chamber. The gas extraction mechanism communicates with the process chamber. When the temperature change rate is outside a predetermined temperature change rate range, a first control signal is sent to the gas inflation mechanism, and/or a second control signal is sent to the gas extraction mechanism to control the temperature change rate within the temperature change rate range.