Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17691245Application Date: 2022-03-10
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Publication No.: US12205875B2Publication Date: 2025-01-21
- Inventor: Satoshi Tsukiyama , Hideo Aoki , Hiroshi Oota , Tomoyasu Yamada , Yuki Takahashi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2021-132880 20210817
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L23/498 ; H01L25/10

Abstract:
A semiconductor device according to the present embodiment includes a substrate and a semiconductor chip. The substrate has a first face and a plurality of conductive connection parts provided on the first face. The semiconductor chip has a second face that faces the first face and a plurality of connection bumps provided on the second face and electrically connected to the plurality of conductive connection parts. The conductive connection part arranged in a chip outer peripheral region of a chip region on the first face where the semiconductor chip is arranged is different in thickness from the conductive connection part arranged in a chip central region of the chip region.
Public/Granted literature
- US20230058480A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-02-23
Information query
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