Invention Grant
- Patent Title: Crystalline oxide thin film, multilayer body and thin film transistor
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Application No.: US17598817Application Date: 2020-03-26
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Publication No.: US12205992B2Publication Date: 2025-01-21
- Inventor: Emi Kawashima , Kazuyoshi Inoue , Masashi Oyama , Masatoshi Shibata
- Applicant: IDEMITSU KOSAN CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2019-064561 20190328
- International Application: PCT/JP2020/013566 WO 20200326
- International Announcement: WO2020/196716 WO 20201001
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L21/02 ; H01L29/04 ; H01L29/66 ; H01L29/786
Abstract:
A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 μm to 0.5 μm.
Public/Granted literature
- US20220199784A1 CRYSTALLINE OXIDE THIN FILM, MULTILAYER BODY AND THIN FILM TRANSISTOR Public/Granted day:2022-06-23
Information query
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