A variable resistance non-volatile memory includes a semiconductor substrate, a first electrode line extending in a first direction away from the semiconductor substrate, a second electrode line extending in the first direction parallel to the first electrode line, an insulating film between the first and second electrode lines, a variable resistance film formed on the first electrode line, a low electrical resistance layer formed on the variable resistance film and having a lower electrical resistance than the variable resistance film, a semiconductor film in contact with the low electrical resistance layer and the insulating film, and formed on opposite surfaces of the second electrode line, a gate insulator film extending in the first direction and in contact with the semiconductor film, and a voltage application electrode that extends in a second direction that crosses the first direction, and is in contact with the gate insulator film.