Invention Grant
- Patent Title: Test circuit and method for reading data from a memory device during memory dump
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Application No.: US18129087Application Date: 2023-03-31
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Publication No.: US12211570B2Publication Date: 2025-01-28
- Inventor: Li-Wei Deng , Ying-Yen Chen , Chih-Tung Chen
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu
- Priority: TW111114835 20220419
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/10 ; G11C29/10 ; G11C29/12

Abstract:
A test circuit coupled to a memory device and configured to read data stored in the memory device during a memory dump, includes a dump controller and a pattern generator. The dump controller triggers the pattern generator to start a pattern generating operation in response to a setting of memory dump mode by a processor. The pattern generator generates multiple control signals in the pattern generating operation and provides the control signals to the memory device. The control signals include an address signal, a memory enable signal and a read enable signal. The address signal includes multiple memory addresses arranged in multiple consecutive clock cycles of the processor. The consecutive clock cycles of the processor is provided to read the data stored in the memory addresses.
Public/Granted literature
- US20230335208A1 Test circuit and method for reading data from a memory device during memory dump Public/Granted day:2023-10-19
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