Invention Grant
- Patent Title: Spatial pattern loading measurement with imaging metrology
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Application No.: US17216203Application Date: 2021-03-29
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Publication No.: US12211717B2Publication Date: 2025-01-28
- Inventor: Eric Chin Hong Ng , Edward Wibowo Budiarto , Mehdi Vaez-Iravani , Todd Jonathan Egan , Venkatakaushik Voleti
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G01B11/06 ; G06N5/04 ; G06N20/00

Abstract:
A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.
Public/Granted literature
- US20220310425A1 SPATIAL PATTERN LOADING MEASUREMENT WITH IMAGING METROLOGY Public/Granted day:2022-09-29
Information query
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