Invention Grant
- Patent Title: Integrated circuit devices including a parameter measuring structure and methods of forming the same
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Application No.: US17837453Application Date: 2022-06-10
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Publication No.: US12211760B2Publication Date: 2025-01-28
- Inventor: Byounghak Hong , Wookhyun Kwon , Hyoeun Park , Kangill Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter measuring structure may include first and second contact structures that extend through the substrate structure. The second surface of the substrate structure may expose respective portions of the first and second contact structures.
Public/Granted literature
- US20230326813A1 INTEGRATED CIRCUIT DEVICES INCLUDING A PARAMETER MEASURING STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2023-10-12
Information query
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