Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17648307Application Date: 2022-01-19
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Publication No.: US12211813B2Publication Date: 2025-01-28
- Inventor: Ling-Yi Chuang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202110744579.2 20210701
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48

Abstract:
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip, where a first conductive connection wire of the first chip is connected to a first conductive contact pad, a second conductive connection wire of the second chip is connected to a second conductive contact pad, the first conductive contact pad includes a first conductor group and a first connection group, and the second conductive contact pad includes a second conductor group and a second connection group.
Public/Granted literature
- US20230005866A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-01-05
Information query
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